Something to look ahead to: To meet rising business calls for for elevated efficiency, SK Hynix, one of many well-known names in DRAM manufacturing, in addition to Samsung, has introduced HBM2E-based DRAM which it says shall be sooner than its Korean counterpart. While no clear date was given by Samsung on when it’s going to deliver its Flashbolt chips to market, SK Hynix is anticipating its product to start mass manufacturing in 2020.

Hot on the heels of Samsung and its “Flashbolt” HBM2E reminiscence, SK Hynix has now turn into the second DRAM producer to announce its next-gen HBM2E that boast 3.6Gbps (vs 3.2Gbps of Samsung’s Flashbolt) velocity efficiency per pin with 1,024 knowledge I/Os.

Offering a 50 p.c soar over previous-gen HBM2, the next-gen HBM2E additionally has “100% additional capacity” in accordance with SK Hynix. By vertically stacking eight 16-gigabit chips, packages of 16GB options shall be doable by utilization of TSV (Through-silicon through) method. For superior {hardware} using a number of stacks like server GPUs, 4-stack processors could possibly be paired up with as a lot as 1.84TB/sec of reminiscence bandwidth.

SK Hynix is aiming its DRAM at “high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance,” which the corporate says permits for sooner knowledge switch owing to the HBM interface that leads to the DRAM sitting ㎛ items aside from GPUs and logic chips versus commodity DRAM merchandise that take the form of module packages and are mounted on system boards.

“SK Hynix has established its technological management since its world’s first HBM launch in 2013,” stated Jun-Hyun Chun, Head of HBM Business Strategy.

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